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Heat Generation in the Metal-Oxide-Silicon Field-Effect Transistor (MOSFET) and Possible Thermal Management Solutions
Technical Paper
2004-01-2571
ISSN: 0148-7191, e-ISSN: 2688-3627
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English
Abstract
In this paper, we discuss the metal-oxide-silicon field-effect transistor (MOSFET) also known as the insulated-gate field-effect transistor (IGFET); its applications; the heat it generates because of its material properties. The paper discusses MOSFET’s dimensions, densities, and why the heat it generates is continually increasing. Finally, there is discussion about various present-day thermal management solutions used for resolving MOSFET thermal issues and a recommendation for future approaches.
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Citation
Jones, K., Mitra, A., and Ramsey, J., "Heat Generation in the Metal-Oxide-Silicon Field-Effect Transistor (MOSFET) and Possible Thermal Management Solutions," SAE Technical Paper 2004-01-2571, 2004, https://doi.org/10.4271/2004-01-2571.Also In
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