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Zth Thermal Modelling of MOSFET in Sub-Milliseconds Range
Technical Paper
2004-01-1684
ISSN: 0148-7191, e-ISSN: 2688-3627
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English
Abstract
1
An FEA (Finite Element Analysis) model was developed based on the physical dimension of the MOSFET device to produce a Zth curve closely matching the experimental Zth curve. This Finite Element Analysis model would then be extrapolated down to the region beyond the capability of the hardware of the Zth measurement system
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Tran, T., McDonald, T., Downer, S., Ambrus, J. et al., "Zth Thermal Modelling of MOSFET in Sub-Milliseconds Range," SAE Technical Paper 2004-01-1684, 2004, https://doi.org/10.4271/2004-01-1684.Data Sets - Support Documents
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Software/Hardware Systems, Systems Engineering, Advanced Electronics Packaging, and Electromagnetic Compatibility (Emc)
Number: SP-1857; Published: 2004-03-08
Number: SP-1857; Published: 2004-03-08
References
- Incropera F.P. Dewitt D.P. Fundamentals of Heat Transfer John Wiley & Sons 1981