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Performance Characteristics of MOSFETs Operating at High Power
Technical Paper
2000-01-3622
ISSN: 0148-7191, e-ISSN: 2688-3627
Annotation ability available
Sector:
Event:
Power Systems Conference
Language:
English
Abstract
This paper demonstrates that the on-resistance of a power MOSFET decreases significantly when the operating temperature decreases. The decrease in on-resistance under cryogenic temperature allows the device to operate at a much higher power and current condition. Also, it is demonstrated that the MOSFET device can be effectively kept at cryogenic temperature by spray cooling with liquid nitrogen. Over 80 W of heat generated can be removed continuously with spray cooling.
Authors
Topic
Citation
Lin, Y., Sundaram, K., and Chow, L., "Performance Characteristics of MOSFETs Operating at High Power," SAE Technical Paper 2000-01-3622, 2000, https://doi.org/10.4271/2000-01-3622.Also In
References
- Grant D. A. Gowar J. Power MOSFETs, Theory and Applications New York Wiley 1989 17
- Baliga B.J. Power Semiconductor Devices Boston PWS 1996 349
- Singh R. Baliga B.J. “Analysis and Optimization of Power MOSFET's for Cryogenic Operation,” Solid State Electronics 36 8 1203 1211 Jan. 1993
- Shenai K. “Performance Potential of Low-Voltage Power MOSFET's in Liquid-Nitrogen-Cooled Power Systems,” IEEE Trans. Electron Devices ED-38 4 934 936 Apr. 1991