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A High-Breakdown Voltage n + -GaAs/δ (p + )-GaInP/n-GaAs Heterojunction Camel-Gate Transistor for Power System Applications
Technical Paper
1999-01-2494
ISSN: 0148-7191, e-ISSN: 2688-3627
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English
Abstract
A high-breakdown-voltage n+-GaAs/δ (p+)-GaInP/n-GaAs camel-gate field-effect transistor with the triple-step doped-channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V at a gate current of 1 mA/mm and a very high breakdown voltage of 40 V with the low gate leakage current of 400 μA/mm are obtained. The measured transconductance is 145 mS/mm with the current gain cut-off frequency fT of 17 GHz and the maximum oscillation frequency fmax of 33 GHz for a 1×100 um2 device. Consequently, based on the remarkable experimental results, the studied device shows a promise for high-power circuit applications.
Authors
Citation
Liu, W., Chang, W., Chen, J., Pan, H. et al., "A High-Breakdown Voltage n+-GaAs/δ (p+)-GaInP/n-GaAs Heterojunction Camel-Gate Transistor for Power System Applications," SAE Technical Paper 1999-01-2494, 1999, https://doi.org/10.4271/1999-01-2494.Also In
References
- Eisenbeiser, K. W. East, J. R. Singh, J. Li, W. Haddad, G. I. Breakdown voltage improvement in strained InGaAlAs/GaAs FET’s IEEE Electron Device Lett 13 1992 421 423
- Scheffer, F. Heedt, C. Reuter, R. Lindner, A. Liu, Q. Prost, W. Tegude, F. J. High-breakdown-voltage InGaAs/InAlAs HFET using InGaP spacer layer Electronics Lett. 30 1994 169 170
- Okamoto, Y. Matsunaga, K. Kuzuhara, M. Enhancement-mode buried gate InGaP/AlGaAs/ InGaAs heterojunction FETs fabricated by selective wet etching IEE Electron Lett. 31 2216 2218
- Liu, W. C. Hsu, W. C. Laih, L. W. Tsai J. H. Lour, W. S. Performance enhancement in a metal-insulator-semiconductor-like pseudomorphic transistor by utlizing an n − -GaAs/n + -In 0.2 Ga 0.8 As two-layer structure Appl. Phys. Lett. 66 1995 1524 1526
- Ueno, K. Furutsuka, T. Toyoshima, H. Kanamoyi, M. Higashisaka, A high transconductance GaAs MESFET with reduced short channel effect characteristics IEDM Tech. Dig. 82 1985
- Golio, J. M. Miller, M. G. Maracas, G. N. Johnson, D. A. Frequency-dependent electrical characteristics of GaAs MESFET IEEE Electron Device Lett. 37 1995 1217 1219
- Kastalsky A. Kiehi, R. A. On the low-temperature degradation of (AlGa)As/GaAs modulation-doped field-effect transistors IEEE Trans. Electron Devices 33 1986 414
- Kao, M. Y. Fu, S. T. Ho, P. Smith, P. M. Chao, P. C. Nordheden, K. J. Wang, S. Very high voltage AlGaAs/InGaAs pseudomorphic power HEMTs,” in IEDM Tech. Dig. 1992 319 321
- Ernst, A. N. Somerville, M. H. Delalamo, J. A. Dynamics of the Kink Effect in InAlAs/InGaAs HEMT’s IEEE Electron Device Lett. 18 1994 613 615
- Koizumi, R. Saitoh, T. Yoh, K. Fabrication of p+-Gate InAs-Channel HEMT Based on InP Solid-State Electronics 41 1997 1525 1527
- Thorne, R. E. Su, L. S. Kopp, W. Fischer, R. J. Drummond, T. J. Morkoc, H. Normally-on and normally-off camel diode gate GaAs field effect transistors for large scale integration J. Appl. Phys. 53 1982 5951 5958
- Lour, W. S. Tsai, J. H. Laih, L. W. Liu, W. C. Influence of channel doping-profile on camel-gate field effect transistors IEEE Trans. Electron Devices 43 1996 871 876
- Tsai, J. H. Lour, W. S. Laih, L. W. Liu, R. C. Liu, W. C. Characteristics of camel gate structures with active doping channel profiles Solid-State Electronics 39 1996 343 347
- Rao, M. A. Caine, E. J. Kroemer, H. Long, S. I. Babic, D. I. Determination of valance and conduction-band discontinuities at the GaInP/GaAs heterojunction by C-V profiling J. Appl. Phys 61 1987 643 649
- Chan, Y. J. Yang, M. T. Al 0.3 Ga 0.7 As/In x Ga 1-x As (0≤x≤0.25) doped-channel field-effect transistors (DCFET’s) IEEE Trans. Electron Devices 42 1995 1745 1749
- Chan, Y. J. Yeh, T. J. Kuo, J. M. Ga 0.51 In 0.49 P/In 0.15 Ga 0.85 As heterostructure pulse doped-chanel FET’s IEE Electron Lett. 30 1994 1094-1095