High Breakdown-Voltage and High-Linearity Camel-Gate Field-Effect Transistor with Multiple Modulation-Doped Channels
Published August 2, 1999 by SAE International in United States
Annotation of this paper is available
A high breakdown-voltage and high-linearity field effect transistor based on n-p-n structure, i.e., camel-gate field-effect transistor (CAMFET), has successfully fabricated and demonstrated. The CAMFET employs very thin n+ and p+ layers together with the channel to form a majority-carrier camel diode for modulating the channel current. The breakdown voltage about 21 V is obtained Furthermore, the maximum drain saturation current and transconductance are as high as 770 mA/mm and 220 mS/mm, respectively. Consequently, for the tri-step doping channel CAMFET, not only have the voltage-independent but also the high transconductance are obtained.
CitationTsai, J., "High Breakdown-Voltage and High-Linearity Camel-Gate Field-Effect Transistor with Multiple Modulation-Doped Channels," SAE Technical Paper 1999-01-2492, 1999, https://doi.org/10.4271/1999-01-2492.
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