A Mechanistic Analysis of Oxygen Vacancy Driven Conductive Filament Formation in Resistive Random Access Memory Metal/NiO/Metal Structures

Resistive Random Access Memory (RRAM) devices have drawn much interest in the last decade, particularly the concept of a memristor. In this case, the so-called memristance, which provides the relationship between the change in charge (time integral of the current) and flux (time integral of the voltage), is not a constant as in linear elements, but a function of the charge, resulting in a nonlinear circuit element. Applications of such two-terminal electrical devices that provide high densities and low-power operation include, for instance, neuromorphic-type computing elements.