This content is not included in
your SAE MOBILUS subscription, or you are not logged in.
Silicon Carbide Power Devices for Use in Hybrid-EV
Annotation ability available
Sector:
Language:
English
Abstract
Silicon Carbide (SiC) is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the area of power electronic switching devices [1]. This paper updates the reader on selected SiC power devices (including the MOS Turn-Off Thyristor (MTO™)) for use in rugged, high power, 500°C operation which will result in significant reduction of cooling requirements. Highlights of progress achieved to date includes 1.0 kV GTO's, 1.4 kV MOSFET's, and 1.6 kV pn junction diodes, all achieved with blocking layers of 10 to 12 μm, a small fraction of the blocking layer thickness required in comparable silicon devices. These and other advantages allow SiC to offer significant numerous system-level advantages (for example, More Electric Tank - Fig. 1).
Authors
- Jeffrey B. Casady - Northrop Grumman Corporation
- Anant K. Agarwal - Northrop Grumman Corporation
- Suresh Seshadri - Northrop Grumman Corporation
- Richard R. Siergiej - Northrop Grumman Corporation
- Michael F. MacMillan - Northrop Grumman Corporation
- Greg T. Dunne - Northrop Grumman Corporation
- Phillip A. Sanger - Northrop Grumman Corporation
- Charles D. Brandt - Northrop Grumman Corporation
- Larry B. Rowland
Topic
Citation
Casady, J., Agarwal, A., Seshadri, S., Siergiej, R. et al., "Silicon Carbide Power Devices for Use in Hybrid-EV," SAE Technical Paper 981284, 1998, https://doi.org/10.4271/981284.Also In
References
- Palmour J.W. Edmond J.A. Kong H.-S. Carter, C.H. Jr. Silicon Carbide and Related Materials, Institute of Physics Conf. Ser. 137 499 1994
- Agarwal A.K. Augustine G. Balakrishna V. Brandt C.D. Burk A.A. Chen L.-S. Clarke R.C. Esker P.M. Hobgood H.M. Hopkins R.H. Morse A.W. Rowland L.B. Seshadri S. Siergiej R.R. Smith, T.J. Jr. Sriram S. IEDM Tech. Dig. 9.1.1. 1996
- Casady, J.B. Johnson, R.W. Solid-State Electronics 39 10 1409 1996
- Agarwal A.K. Casady J.B. Rowland L.B. Seshadri S. Siergiej R.R. Valek W.F. Brandt C.D. IEEE Elect. Dev. Lett. 18 518 1997