SOI Type Pressure Sensor for High Temperature Pressure Measurement

940634

03/01/1994

Event
International Congress & Exposition
Authors Abstract
Content
An SOI type pressure sensor has been developed which can measure pressure at high temperature environments above 150°C.
SOI stands for Silicon On Insulator. A single-crystalline silicon layer is located on an insulating layer formed on a silicon substrate. The piezoresistors of the SOI type pressure sensor are made from the single-crystalline silicon layer which is isolated from the silicon substrate by the insulating layer. There is no leakage current from the piezoresistors. The SOI structure is made by the laser-recrystallization-method.
The properties of the SOI type pressure senor are as good as conventional semiconductor pressure sensors.
Meta TagsDetails
DOI
https://doi.org/10.4271/940634
Pages
7
Citation
Hase, Y., Bessho, M., and Ipposhi, T., "SOI Type Pressure Sensor for High Temperature Pressure Measurement," SAE Technical Paper 940634, 1994, https://doi.org/10.4271/940634.
Additional Details
Publisher
Published
Mar 1, 1994
Product Code
940634
Content Type
Technical Paper
Language
English