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MOS Controlled Thyristor (MCT) Characteristics Under Advanced Liquid Cooling
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English
Abstract
The Mos Controlled Thyristor (MCT) is a very promising switch device which combines the high power capability of thyristors and the low energy gate control of a MOS device. The MCT has high voltage and high current capabilities and its power dissipation depends on the losses due to turn-on, turn-off and conduction.
This paper describes the potential of indirect liquid cooling to remove the waste heat generated while a MCT is operating at various power levels and switching frequencies.
An MCT device dissipated 187 W. The switching mode was cooled to keep the junction temperature below 150°C by using the Venturi cooling technique.
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Citation
Nguyen, B., "MOS Controlled Thyristor (MCT) Characteristics Under Advanced Liquid Cooling," SAE Technical Paper 932576, 1993, https://doi.org/10.4271/932576.Also In
References
- Temple V.A. “MOS Controlled Thyristor - A New Class of Power Devices,” IEEE Trans. Electronic Devices ED-33 10 1609 1618 October 1986
- Temple V.A. “Advanced in MOS Controlled Thyristor Technology,” Power Conversion and Intelligent Motion 12 15 November 1989
- Ponnappan R. Beam J.E. “A Novel Electronic Cooling Concept,” SAE Paper No. 9 29478 Proc. 27th EECEC 2 411 416 August 1992
- Nguyen B.T. Fronista G.L. Weimer J.A. Kazimierczuk M.K. Thirunarayan N. “Experimental Static and Dynamic Characteristics of MOS Controlled Thyristor,” 1992 IEEE Industry Applications Society Annual Meeting Vol. 1150 1157 October 1992