Automotive MOSFETs Operating in the Safe Operating Area

2015-01-0263

04/14/2015

Event
SAE 2015 World Congress & Exhibition
Authors Abstract
Content
The modern day power MOSFET is constructed using the latest technology in order to minimize the drain source resistance. The latest MOSFET technologies are capable of achieving the same drain to source resistance with a smaller MOSFET die than previous generations which will directly lead to increased thermal resistance and limited energy handling capability. This paper will discuss the Safe Operating Area of power MOSFETs and how to assess new MOSFET technology.
Meta TagsDetails
DOI
https://doi.org/10.4271/2015-01-0263
Pages
4
Citation
Puerschel, M., Kiep, A., and Spielman, C., "Automotive MOSFETs Operating in the Safe Operating Area," SAE Technical Paper 2015-01-0263, 2015, https://doi.org/10.4271/2015-01-0263.
Additional Details
Publisher
Published
Apr 14, 2015
Product Code
2015-01-0263
Content Type
Technical Paper
Language
English