The intention of this paper is to discuss the importance of
analysis of some electrical parameters in order to design analog
circuits in electronic modules, including automotive ones. Today,
the challenge is to have devices which consume less power, high
performance and higher integration density, so that it explains why
such analysis is crucial to achieve better performances and meet
the desired results. To understand how this analysis of electrical
parameters are important and show how the devices can have better
performance, this paper brings an experimental comparative study
between the Wave MOSFET layout style ("S" shape gate
geometry) and the Conventional MOSFET (conventional rectangular
gate geometry usually called as Bulk) counterpart in order to
verify and quantify the benefits that the Wave structure can bring
to improve the performance of devices in analog circuits,
especially in terms of the drain current in the saturation region
(IDSat), the transconductance
(gm), the ratio of transconductance over the drain
current (gm/IDS) as a function of the ratio of the
drain current normalized by the geometric factor
(IDS/fg), the frequency response [voltage gain
(Av) and the unit voltage gain frequency (fT)].
Verifying the comparison between the Wave MOSFET and the
Conventional MOSFET on this paper the designer will take a chance
to understand the analysis that can be executed for any other
device.