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EXPERIMENTAL DEMONSTRATION OF 1200V SiC-SBDs WITH LOWER FORWARD VOLTAGE DROP AT HIGH TEMPERATURE
Technical Paper
2011-39-7254
ISSN: 0148-7191, e-ISSN: 2688-3627
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English
Abstract
The 1200V class silicon carbide Schottky barrier diodes were designed and fabricated. The drift layer resistance was reduced in order to realize low forward voltage drops. Since the low drift layer resistance led to the low breakdown voltage, the avalanche withstanding capability should be enhanced not to cause the destructive breakdown. By means of the optimized device design, we succeeded to realize the low forward voltage drop while maintaining the high avalanche withstanding capability. The forward voltage drops at 200A/cm° were 1.35V at 25°C and 1.63V at 175°C, respectively. The avalanche withstanding capability was more than 3500mJ/cm₂ at 25°C. By substituting SiC-SBDs for Sipin diodes, the estimated total power loss of the module comprised by Si-IGBTs and the diodes was reduced by 35%. We could also confirm that no failures happened after long term reliability tests.
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Authors
- Takashi Tsuji - National Institute of Advanced Industrial Science and Techno
- Akimasa Kinoshita - National Institute of Advanced Industrial Science and Techno
- Noriyuki Iwamuro - National Institute of Advanced Industrial Science and Techno
- Kenji Fukuda - National Institute of Advanced Industrial Science and Techno
- Hiroshi Kimura - Fuji Electric Holdings Co., Ltd.
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Citation
Tsuji, T., Kinoshita, A., Iwamuro, N., Fukuda, K. et al., "EXPERIMENTAL DEMONSTRATION OF 1200V SiC-SBDs WITH LOWER FORWARD VOLTAGE DROP AT HIGH TEMPERATURE," SAE Technical Paper 2011-39-7254, 2011, https://doi.org/10.4271/2011-39-7254.Also In
References
- Kinoshita, A. Nishi, T. Ohyanagi, T. Yatsuo, T. Fukuda, K. Okumura, H. Arai, K. Mater. Sci. Forum 600-603 643 646 2009
- Kinoshita, A. Ohyanagi, T. Yatsuo, T. Fukuda, K. Okumura, H. Arai, K. Mater. Sci. Forum 645-648 893 896 2010