Heat Generation in the Metal-Oxide-Silicon Field-Effect Transistor (MOSFET) and Possible Thermal Management Solutions

2004-01-2571

07/19/2004

Event
International Conference On Environmental Systems
Authors Abstract
Content
In this paper, we discuss the metal-oxide-silicon field-effect transistor (MOSFET) also known as the insulated-gate field-effect transistor (IGFET); its applications; the heat it generates because of its material properties. The paper discusses MOSFET’s dimensions, densities, and why the heat it generates is continually increasing. Finally, there is discussion about various present-day thermal management solutions used for resolving MOSFET thermal issues and a recommendation for future approaches.
Meta TagsDetails
DOI
https://doi.org/10.4271/2004-01-2571
Pages
13
Citation
Jones, K., Mitra, A., and Ramsey, J., "Heat Generation in the Metal-Oxide-Silicon Field-Effect Transistor (MOSFET) and Possible Thermal Management Solutions," SAE Technical Paper 2004-01-2571, 2004, https://doi.org/10.4271/2004-01-2571.
Additional Details
Publisher
Published
Jul 19, 2004
Product Code
2004-01-2571
Content Type
Technical Paper
Language
English